预计三星将把其 HBM4 和 HBM4E DRAM 的产量提高一倍以上。
Samsung is expected to more than double output of its HBM4 and HBM4E DRAM

原始链接: https://en.sedaily.com/finance/2026/09/20/samsung-to-double-hbm4-output-next-year-sources-say

三星电子计划明年将其 HBM4 和 HBM4E 高带宽内存芯片的产量翻一番以上。这一激进扩张计划体现在公司对玻璃载板的需求上,其需求量预计将比今年增加 2.5 倍,这种载板是 DRAM 晶圆减薄过程中的关键支撑材料。通过将这些载板的外部清洗量提高到每月 5 万片,三星释放了明确信号,即正大幅转向更高容量的 12 层堆叠内存产品。 行业预测显示,到明年,三星的 HBM 总产能将增长近 40%,达到每月约 25 万片晶圆。此外,产品组合正向这些先进代际大幅倾斜,预计 HBM4 系列在出货量中的占比将从今年的 40% 左右上升至 2025 年的约 80%。随着 HBM4 的量产已在进行中,且 12 层 HBM4E 的样品已提供给英伟达等主要客户,三星正将高价值的 HBM4 技术定位为其半导体增长战略的核心。

这篇 Hacker News 讨论聚焦于三星计划大幅提高 HBM4 和 HBM4E DRAM 产量的报道。用户针对这一转变带来的广泛影响展开了辩论,主要集中在以下三个方面: * **供应链中断:** 评论者指出,HBM 生产是人工智能硬件的主要瓶颈,甚至影响到了华为等中国制造商。由于 HBM 需要专门且复杂的封装工艺(如晶圆减薄、硅通孔技术),其消耗的制造产能远超普通消费级 DRAM,这引发了人们对日常消费级内存供应减少和价格上涨的担忧。 * **人工智能“淘金热”:** 对于当前由 AI 驱动的内存需求是否具有可持续性,外界存在怀疑态度。一些人认为,对数据中心的大规模资本支出带有投机性质;而另一些人则坚持认为,行业只是在响应合理的市场需求。 * **经济策略:** 该讨论帖突显了“自由市场”导向(高利润驱动生产转移)与“消费者影响”(基本硬件变得昂贵到令人望而却步)之间的矛盾。怀疑论者指出了内存行业存在价格操纵的历史,暗示当前的各种市场条件正被寡头垄断企业所利用,以维持高昂的价格。
相关文章

原文
A shareholder photographs sixth-generation high-bandwidth memory (HBM4) and seventh-generation HBM4E chips with a smartphone camera at Samsung Electronics' 57th annual general meeting of shareholders, held in March at the Suwon Convention Center in Yeongtong-gu, Suwon, Gyeonggi Province. Yonhap News

Samsung Electronics (005930) is expected to more than double output of its HBM4 family of high-bandwidth memory chips next year, including sixth-generation HBM4 and seventh-generation HBM4E, as the company plans to raise demand for glass carriers by 2.5 times from this year. Glass carriers are glass supports that hold wafers in place while HBM DRAM is thinned.

Samsung will increase outsourced cleaning volume for glass carriers, an essential material in HBM production, to 50,000 sheets a month next year from 20,000 sheets a month this year, according to semiconductor industry sources on the 20th. Glass carrier requirements stood at 10,000 sheets a month as recently as last year, doubling this year and set to rise 2.5-fold next year.

A glass carrier is a support temporarily attached to the underside of an HBM DRAM wafer to prevent bending or cracking while the wafer is ground thin and drilled. Because HBM requires stacking multiple DRAM dies within a limited thickness, the technology for thinning wafers and the processes for controlling warpage become more important as stack counts rise.

The HBM4 and HBM4E products Samsung is preparing to scale up center on 12-layer and higher stacks. Industry analysts say that even accounting for the fact that glass carriers are reused after cleaning and that consumption varies by process loading method and yield, a 2.5-fold increase in related volume makes it highly likely that HBM4 and HBM4E output will grow at least twofold from this year.

In February, Samsung began mass-production shipments of HBM4 using 10-nanometer-class sixth-generation (1c) DRAM and a base die built on a 4-nanometer process. In May, it also provided 12-layer HBM4E samples to customers including Nvidia.

The industry expects Samsung's HBM production scale to grow nearly 40% to about 250,000 wafers next year from roughly 180,000 wafers this year, measured by average monthly wafer input. By product shipment mix, the HBM4 family is projected to rise from around 40% this year to about 80% next year as HBM4E mass production ramps up. "As Samsung expands HBM production, it appears to be placing HBM4, a high-value product, at the center," an industry official said.

Sixth-generation high-bandwidth memory (HBM4) products are loaded onto a truck for mass-production shipment at Samsung Electronics' Cheonan campus in Chungcheongnam-do in February this year. Samsung Electronics
联系我们 contact @ memedata.com