This charge transfer leaves behind a high-density two-dimensional hole gas (2DHG) confined within a few nanometers of the surface, producing p-type conductivity while preserving the intrinsic purity, thermal conductivity, and breakdown strength of the diamond bulk.

Because no ion implantation or lattice substitution is required, surface transfer doping avoids defect generation and carrier scattering associated with conventional doping, making it particularly attractive for high-power, high-frequency, and radiation-hard electronic device platforms.